3C-SiC Conductive Silicon Carbide Wafer, N-Type 2 Inch Substrate, Low Resistivity ≤0.0006 Ω·cm, High Mobility Crystal for Research & Fabrication (10x10mm 3C-SiC)

This 3C-SiC conductive silicon carbide wafer features an N-type crystal structure with high electron mobility reaching 1100 cm²/V·s. Compared with 4H-SiC, the smaller bandgap enables lower FN tunneling current during oxide preparation, improving device reliability and performance. With precise 350±25 μm thickness, low micro-pipe density <0.1 cm⁻², and resistivity ≤0.0006 Ω·cm, this wafer is designed for semiconductor research, epitaxy, MEMS development, and material studies. Available in 2, 3, and 4-inch sizes.

• High-Mobility 3C Crystal Structure 3C-SiC N-type substrate featuring electron mobility up to 1100 cm²/V·s for advanced device research.
• Low Resistivity ≤0.0006 Ω·cm Conductive substrate optimized for electronic, MEMS, and power-related experimental applications.
• Multiple Sizes Available Offered in 2-inch, 3-inch, and 4-inch diameters with 50.8±0.38 mm sizing standard.
• Precision Thickness & Low Micropipe Density 350±25 μm thickness with micropipe density <0.1 cm⁻² for stable material performance.
• Suitable for Research & Fabrication Ideal for material studies, epitaxy, experiments, and semiconductor engineering projects.